Degradation Monitoring and its Mechanism Analysis of SiC Power MOSFETs Subjected to Repetitive Surge Stress on the Base of Current Transient Feature
ID：70
Submission ID：75 View Protection：ATTENDEE
Updated Time：2025-11-03 11:25:39
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Oral Presentation
Start Time：2025-11-09 10:50 （Asia/Shanghai）
Duration：15min
Session：[S2] 2. Power electronics technology and application » [S2] 2.Power electronics technology and application
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Abstract
In this paper, a degradation monitoring method based on the current switching rate of SiC power MOSFETs in power supplies is proposed. Theoretical analysis establishes a correlation between the degradation of transconductance in SiC power MOSFETs and current transient characteristics. The impact of degradation is observed through the output voltage of a current switching rate sensor in a non-invasive manner. Degraded devices are subjected to repetitive surge current stress, and an experimental platform based on a BOOST circuit simulates real operating conditions. Comparative analysis of the turn-on current switching rate characteristics before and after degradation reveals a significant reduction in the peak value of the current switching rate following surge current stress. The results demonstrate that the current switching rate can effectively reflect device degradation and can serve as an early indicator for online monitoring of chip and package degradation in SiC power MOSFETs.
Keywords
SiC power MOSFETs, health condition monitoring, surge current.
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